High Performance Dynamic Feedback Control based Static RAM using CNTFET Technology

Abstract

Performance of Static RAM is a major concern for VLSI researchers. Random-access memory (RAM) is a sort of PC or IC data stockpiling generally utilized for putting away run time factors and guidelines in microcontroller and handling units. It is most commonly used circuit in any part of memory-based devices. Technology scaling and short channel effects gives transition of work from MOSFET based to CNTFET based. CNTFET is proven to provide better performance in 22nm technology. In this paper, a special SRAM with Dynamic Feedback Control is proposed using CNTFET technology i.e. Carbon Nano Tubes Field Effect Transistor. The result shows improvement in Average Power Consumption, Speed, PDP, Leakage Current and Power Dissipation. The results are simulated on Synopsys HSPICE software tool.